Asia Pacific GaN Power Devices Market Generate Substantial Opportunities Growing at a CAGR of 19.9%: Transparency Market Research

According to a new market research report published by Transparency Market Research (www.transparencymarketresearch.com) “GaN Power Devices Market (Component – GaN Power Discrete Devices (GaN Power RF Devices, GaN Power Non-RF Devices), GaN Power IC’s (MMIC, Hybrid), GaN Power Modules; Industry Vertical – Consumer Electronics, IT & Telecommunications, Automotive, Aerospace & Defense, Others) – Global Industry Analysis, Size, Share, Growth, Trends and Forecast, 2017 – 2025,” the global GaN power devices market is expected to reach US$ 1,410.3 Mn by 2025. The market is anticipated to expand at a CAGR of 17.5% during the period from 2017 to 2025. The global GaN power devices market is mainly driven by growing popularity of GaN power devices due to enhanced performance features.

Browse The Press Release: http://www.transparencymarketresearch.com/pressrelease/gan-power-devices-market.htm

Gallium Nitride has been an alternative material to pure silicon in the field of semiconductors & electronics. As a result of extensive research carried out to find an alternative semiconductor material in the last century, several advanced features of GaN proved to be effective for semiconductors such as superior high frequency handling capacity, high-brightness emission and intensity when used in opto-semiconductors and high power efficiency. Extensive research was undertaken in the past decade to utilize gallium nitride for semiconductor power devices and electronic systems. A well designed GaN power device offers greater power handling capacity, reliability and other performance attributes compared to the well-developed, widely offered silicon MOSFET power devices. All these factors that are critical to meeting the high-density and power needs of today’s servers, systems, and computers. Expansion in the application areas of GaN based power devices is encouraging higher adoption of GaN power devices.

Among the geographies, North America held the large market share of around 35.1% in the global GaN power devices market in 2016. The market for GaN power devices is expected to witness significant growth in North America, due to wide utilization of GaN based transistors in defense and military sectors in this region. Moreover, increasing demand for LEDs in laptops, computers, gaming devices, televisions and mobile tablets has further fuelled the penetration of GaN power devices. Thus, various manufacturers in North America are continuously focusing on research and development activities in order to improve the scope of the market for GaN power devices.

In 2016, among components, GaN Power Discrete Devices held the largest share among all types considered within North America. Among industry verticals, consumer electronics contributed maximum market share of 35.5% in 2016. The Asia Pacific region is anticipated to grow significantly at a healthy CAGR of 19.9% over the forecast period. In Asia-Pacific, the growing demand from the consumer electronics sectors, most importantly from the mobile, communication and computing segments is driving market growth. Consumer electronics market is expanding at a rapid pace in countries such as China and India for meeting the growing local demand. Therefore, these countries are expected to be the potential markets for GaN power devices. In addition, in the near future, China is likely to adopt LED and solid-state lighting technologies and radio frequency (RF) devices which is also likely to show positive impact on GaN power devices market due to development in RF semiconductor devices industryd.

Europe is expected to grow at a CAGR of about 17.9%. GaN has been acknowledged as the key facilitating technology for space by the European Space Agency (ESA). The ESA had launched the GaN reliability enhancement and technology transfer (GREAT2) initiative in order to develop new applications and improve products comprising wide band gap semiconductors. These factors are largely responsible for the growth of the GaN power devices market in Europe. In MEA, rising demand for affordable consumer electronics has given rise to favorable conditions for the growth of consumer electronics market in Middle East and Africa (MEA). South America is anticipated to hold nearly 5.1% of the market share in 2016.

The key players in GaN Power Devices market include Efficient Power Conversion Corporation, NXP Semiconductors N.V., GaN Systems Inc, Texas Instruments, Infineon Technologies AG, Fujitsu Limited, Transphorm Inc., Cree Incorporated (Wolfspeed), OSRAM Opto Semiconductors GmbH, and Qorvo, Inc, among others.

The global GaN power devices market is segmented as below:

Market Segmentation

GaN Power Devices Market, by Component

  • GaN Power Discrete Devices

    • GaN Power RF Devices

    • GaN Power Non-RF Devices

  • GaN Power IC’s

    • MMIC

    • Hybrid

  • GaN Power Modules

GaN Power Devices Market, Industry vertical

    • Consumer Electronics

    • IT & Telecommunications

    • Automotive

    • Aerospace & Defense

    • Others

GaN Power Devices Market, by Geography

  • North America

    • The U.S.

    • Canada

    • Rest of North America

  • Europe

    • The U.K.

    • Germany

    • France

    • Rest of Europe

  • Asia Pacific (APAC)

    • China

    • Japan

    • South Korea

    • Rest of APAC

  • Middle East and Africa (MEA)

    •  GCC

    • South Africa

    • Rest of MEA

  • South America

    • Brazil

    • Argentina

    • Rest of South America

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